NTD110N02R-001G 数据手册
数据手册规格
|
数据手册名称
|
NTD110N02R, STD110N02R
|
|
文件大小
|
128.349
千字节
|
|
文件类型
|
pdf
|
|
页数
|
6
|
技术规格
-
Manufacturer:
ON Semiconductor
-
Series:
-
-
Packaging:
Tube
-
Part Status:
Obsolete
-
FET Type:
N-Channel
-
Technology:
MOSFET (Metal Oxide)
-
Drain to Source Voltage (Vdss):
24V
-
Current - Continuous Drain (Id) @ 25°C:
12.5A (Ta), 110A (Tc)
-
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
-
Rds On (Max) @ Id, Vgs:
4.6mOhm @ 20A, 10V
-
Vgs(th) (Max) @ Id:
2V @ 250µA
-
Gate Charge (Qg) (Max) @ Vgs:
28nC @ 4.5V
-
Vgs (Max):
±20V
-
Input Capacitance (Ciss) (Max) @ Vds:
3440pF @ 20V
-
FET Feature:
-
-
Power Dissipation (Max):
1.5W (Ta), 110W (Tc)
-
Operating Temperature:
-55°C ~ 175°C (TJ)
-
Mounting Type:
Through Hole
-
Supplier Device Package:
I-PAK
-
Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
-
Base Part Number:
NTD110
-
detail:
N-Channel 24V 12.5A (Ta), 110A (Tc) 1.5W (Ta), 110W (Tc) Through Hole I-PAK
